1N4005, 1N4005 Datasheet, 1N4005 General Purpose Diode Datasheet, buy 1N4005 Diode BSP300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP300 800 V 0.19 A 20 Ω PG-SOT223 BSP300 Type RoHS compliant Tape and Reel Information Maximum Ratings Parameter Symbol Values Unit Continuous drain ...

Silicon Power Rectifiers, 1N2160 datasheet, 1N2160 circuit, 1N2160 data sheet : NJSEMI, alldatasheet, datasheet, Datasheet search site for Electronic Components and ... datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. Buy SOLID STATE 1N2160 online at Newark. Buy your 1N2160 from an authorized SOLID STATE distributor. Click here for the datasheet for NTE5994. If this datasheet link is broken, the datasheet may still be available at nteinc.com . This part is the equivalent replacement for the following: 1N1128A TO 1N2234A datasheet, pdf, data sheets, manual, alldatasheet, free, Datasheets, databook. Transistor, Diode, Capacitor, Displays, Connectors, Sensor. Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ... SILICON POWER RECTIFIER, 1N2160 datasheet, 1N2160 circuit, 1N2160 data sheet : MICROSEMI, alldatasheet, datasheet, Datasheet search site for Electronic Components and ...

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V VS-1N1185A Power Silicon Rectifier Diodes Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. SILICON POWER RECTIFIER, 1N2160 datasheet, 1N2160 circuit, 1N2160 data sheet : MICROSEMI, alldatasheet, datasheet, Datasheet search site for Electronic Components and ... 1N2160 datasheet, 1N2160 datasheets, 1N2160 pdf, 1N2160 circuit : MICROSEMI - SILICON POWER RECTIFIER ,alldatasheet, datasheet, Datasheet search site for Electronic ... Compare pricing for TE Connectivity 172160-1 across 48 distributors and discover alternative parts, CAD models, technical specifications, datasheets, and more on Octopart. 8TQ100S offered from Heisener shipps same day. 8TQ100S, Diodes - Rectifiers - Single, DIODE SCHOTTKY 100V 8A D2PAK. 1N2160 Specifications: Diode Type: Standard Recovery ; Repetitive Reverse Voltage Vrrm Max: 600V ; Forward Current If(AV): 40A ; Forward Voltage VF Max: 1.19V ; Reverse Recovery Time trr Max: - ; Forward Surge

1N4001G – 1N4007G Document number: DS29002 Rev. 8 - 2 2 of 3 www.diodes.com January 2012 © Diodes Incorporated 1N4001G - 1N4007G 40 60 80 100 120 140 160 180

Product Description. This Standard Recovery Rectifier is packaged in DO-4 package, which has a maximum forward current of 12A. Available as High Reliability device per MIL-PRF-19500, indicate –HR suffix after the part number.

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Buy SOLID STATE 1N2160 online at Newark. Buy your 1N2160 from an authorized SOLID STATE distributor. datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. This data sheet provides information on subminiature size, axial lead mounted rectifiers for general−purpose low−power applications. Features • Shipped in Plastic Bags, 1000 per bag • Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the part number • Available in Fan−Fold Packaging, 3000 per box, by adding a ... SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor V DS 650 V RDS(on) 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance PG-TO262 PG-TO220FP PG-TO220 Marking 11N65C3 11N65C3 ...

1n2160 datasheet

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Text: 1N2160 asi SILICON RECTIFIER DESCRIPTION: The 1N2160 is a Power Rectifier Designed for General Purpose Power Supply Applications. MAXIMUM RATINGS lo 25 A @ T c = 145 °C VRWM * 600 V T, -65 °C to +200 °C -65 °C to +200 °C 1 "s T G 11.5 °C/W à jc CHARACTERISTICS t c = 2 5 ° c SYMBOL TEST CONDITIONS Ir MINIMUM VR= 600 V TYPICAL MAXIMUM 100 Tc = 190 °C UNITS Hà 5.0 vF lF = 25 A 1.8 V i2 t T = 8.3 mS 675 A2 BSP300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP300 800 V 0.19 A 20 Ω PG-SOT223 BSP300 Type RoHS compliant Tape and Reel Information Maximum Ratings Parameter Symbol Values Unit Continuous drain ... 1N100, 1N100, 1N100, 1N100A, 1N100A datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. Datasheet Search System New Jersey Semi-Conductor Products, Inc. Datasheets for Diodes Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and ... Text: 1N2160 asi SILICON RECTIFIER DESCRIPTION: The 1N2160 is a Power Rectifier Designed for General Purpose Power Supply Applications. MAXIMUM RATINGS lo 25 A @ T c = 145 °C VRWM * 600 V T, -65 °C to +200 °C -65 °C to +200 °C 1 "s T G 11.5 °C/W à jc CHARACTERISTICS t c = 2 5 ° c SYMBOL TEST CONDITIONS Ir MINIMUM VR= 600 V TYPICAL MAXIMUM 100 Tc = 190 °C UNITS Hà 5.0 vF lF = 25 A 1.8 V i2 t T = 8.3 mS 675 A2